Transparent capacitor with multi-layer grid structure

ABSTRACT

A transparent capacitor apparatus includes a first transparent substrate including a first patterned conductive layer having a first conductive material located over the first transparent substrate; a dielectric layer located over the first patterned conductive layer; a second patterned conductive layer including a second conductive material located over the dielectric layer, wherein the second pattern is different from the first pattern; and a second transparent substrate located over the second patterned conductive layer. Portions of the first conductive material of the first patterned conductive layer overlap portions of the second conductive material of the second patterned conductive layer. The overlapping portions of the first and second conductive materials form matching patterned electrical conductor(s) having spatially matching conducting and non-conductive areas, the non-conductive areas of the first and second patterned conductive layers having encapsulated coalesced conductive material structures.

CROSS-REFERENCE TO RELATED APPLICATIONS

Reference is made to commonly-assigned, co-pending U.S. patentapplication Ser. No. ______ (Kodak Docket K000734US01) filedconcurrently herewith, entitled “MAKING TRANSPARENT CAPACITOR WITHMULTI-LAYER GRID” by MITCHELL BURBERRY, ET AL., the disclosure of whichis incorporated herein.

FIELD OF THE INVENTION

The present invention relates to transparent capacitors.

BACKGROUND OF THE INVENTION

Transparent conductors are widely used in the flat-panel displayindustry to form electrodes that are used to electrically switch thelight-emitting or light-transmitting properties of a display pixel, forexample in liquid crystal or organic light-emitting diode displays.Transparent conductors are also used to create electrodes fortransparent capacitors used in capacitive touch-screen in conjunctionwith displays. In such displays, the transparency and conductivity ofthe transparent electrodes are important attributes. In general, it isdesired that transparent electrodes have a high transparency (forexample, greater than 90% in the visible spectrum) and a highconductivity (for example, less than 10 ohms/square).

Typical prior-art materials for such electrodes include indium tin oxide(ITO) and very thin layers of metal, for example silver or aluminum ormetal alloys including silver or aluminum. These materials are coated,for example by sputtering or vapor deposition, and patterned on displaysubstrates, such as glass. However, the current-carrying capacity ofsuch electrodes is limited, thereby limiting the amount of power thatcan be supplied to the pixel elements. Moreover, the substrate materialsare limited by the deposition process (e.g. sputtering). Thicker layersof metal oxides or metals increase conductivity but reduce thetransparency of the electrodes.

Various methods of improving the conductivity of transparent conductorsare taught in the prior art. For example, issued U.S. Pat. No. 6,812,637entitled “OLED Display with Auxiliary Electrode” by Cok, describes anauxiliary electrode to improve the conductivity of the transparentelectrode and enhance the current distribution. It is also known toprovide wire grids on transparent substrates to provide optical controlof incident light. For example, U.S. Pat. No. 6,532,111 describes awire-grid polarizer. However, the formation of such metal grids isproblematic. Sputtering through a shadow mask is difficult for largesubstrates due to thermal expansion and alignment problems of the shadowmask. Likewise, evaporative deposition of conductive materials such asmetals requires high temperatures and suffers from the same maskproblems. High temperatures can also destroy any temperature-sensitiveunderlying layers or substrates. The use of photolithography to patternmetal layers, metal-oxide layers, or metal grids can compromise theintegrity of underlying layers. Furthermore, a metal grid is nottransparent and can cover only a relatively small proportion of thetransparent conductor area, reducing the conductivity of the auxiliaryelectrode.

It is also known in the prior art to form conductive traces usingnano-particles comprising, for example silver. The synthesis of suchmetallic nano-crystals is known. For example, U.S. Pat. No. 6,645,444 B2entitled “Metal nano-crystals and synthesis thereof” describes a processfor forming metal nano-crystals optionally doped or alloyed with othermetals. US20060057502 A1 entitled “Method of forming a conductive wiringpattern by laser irradiation and a conductive wiring pattern” describesfine wirings made by a method having the steps of painting a board witha metal dispersion colloid, drying the metal dispersion colloid into ametal-suspension film, irradiating the metal-suspension film with alaser beam of 300 nm-550 nm wavelengths, depicting arbitrary patterns onthe film with the laser beam, aggregating metal nano-particles intolarger conductive grains, washing the laser-irradiated film, eliminatingnon-irradiated metal nano-particles, and forming metallic wiringpatterns built by the conductive grains on the board thus enabling aninexpensive apparatus to form fine arbitrary wiring patterns on boardswithout expensive photo-masks, resists, exposure apparatus and etchingapparatus. US20060003262 similarly discloses a method of forming apattern of electrical conductors on a substrate, wherein metalnano-particles can be mixed with a light-absorbing dye, and the mixtureis then coated on the substrate. However, the wirings made with suchmaterials are not transparent, particularly in combination with desiredconductivity.

U.S. Pat. No. 4,394,661 relates to a thin metal masking film that willcoalesce or “ball up” when heated rapidly with a high-intensity laserbeam. This reduces the coverage of the metal film over a substrate andincreases optical transmission. However, there is a problem with usingsuch an element in that the optical density is not sufficient for manyapplications. If a thick metal film is employed in order to increaseoptical density, then the efficiency for coalescence decreases and thesize of the debris created upon heating increases. U.S. Pat. No.4,650,742 relates to a method of using an optical recording mediumhaving two metal layers sandwiching a sublimable organic layer. There isa problem with this method, however, in that removing the sublimableorganic layer requires a material collection apparatus and can beenvironmentally detrimental. U.S. Pat. No. 4,499,178 relates to a methodof using an optical recording material where a heat insulating layer isinterposed between a metallic recording layer and a reflecting layer.There is a problem with using this method in that the reflecting layerdoes not coalesce and therefore does not add to the image contrast. U.S.Pat. No. 6,243,127 describes a process of forming an image using amulti-layer metal coalescence thermal recording element. However, theseprior-art methods do not form conductive and transparent electrodes.

As is known and practiced in the prior art, multiple layers oftransparent conductors patterned on one or more transparent substratescan form capacitive arrays used in touch screens. In these applications,it is important to align the multiple layers to improve the capacitanceof the layers of transparent conductors and to provide coverage ofcapacitors over the transparent substrate. Such alignment and patterningof multiple layers of transparent conductors is typically done withhigh-resolution photolithography equipment. Such equipment can be veryexpensive and limit manufacturing throughput and the materials used havelimited conductivity and transparency.

There is a need, therefore, for an improved method for providingincreased conductivity and transparency to the electrodes of acapacitive device that is scalable to large sizes, avoids heatingmaterials in sensitive locations, enables simple layer alignment, andavoids the use of chemical processes and photolithographic equipment.

SUMMARY OF THE INVENTION

In accordance with the present invention, a transparent capacitorapparatus, comprises:

a first transparent substrate including a first patterned conductivelayer having a first conductive material located over the firsttransparent substrate;

a dielectric layer located over the first patterned conductive layer;

a second patterned conductive layer including a second conductivematerial located over the dielectric layer, wherein the second patternis different from the first pattern;

a second transparent substrate located over the second patternedconductive layer; and

wherein portions of the first conductive material of the first patternedconductive layer overlap portions of the second conductive material ofthe second patterned conductive layer and the overlapping portions ofthe first and second conductive materials form matching patternedelectrical conductor(s) having spatially matching conducting andnon-conductive areas, the non-conductive areas of the first and secondpatterned conductive layers having encapsulated coalesced conductivematerial structures.

The present invention provides an improved apparatus and method forproviding increased conductivity and transparency to the electrodes of acapacitive device that is scalable to large sizes, avoids heatingmaterials in sensitive locations, enables simple layer alignment, andavoids the use of chemical processes and photolithographic equipment.The present invention can also enable flexible substrates used incapacitive touch-screen device to create flexible displays withtouch-screen interactivity.

These, and other, attributes of the present invention will be betterappreciated and understood when considered in conjunction with thefollowing description and the accompanying drawings. It should beunderstood, however, that the following description, although indicatingembodiments of the present invention and numerous specific detailsthereof, is given by way of illustration and not of limitation. Forexample, the summary descriptions above are not meant to describeindividual separate embodiments whose elements are not interchangeable.Many of the elements described as related to a particular embodiment canbe used together with, and interchanged with, elements of otherdescribed embodiments. The figures below are not intended to be drawn toany precise scale with respect to relative size, angular relationship,or relative position or to any combinational relationship with respectto interchangeability, substitution, or representation of an actualimplementation.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent when taken in conjunction with the followingdescription and drawings wherein identical reference numerals have beenused to designate identical features that are common to the figures, andwherein:

FIG. 1A is a cross section illustrating an apparatus according to anembodiment of the present invention;

FIG. 1B is a cross section illustrating coalesced material useful in anembodiment of the present invention;

FIG. 1C is a cross section illustrating coalesced material in analternative structure useful in understanding the present invention;

FIG. 2A is a cross section illustrating an apparatus according to anembodiment of the present invention;

FIG. 2B is a cross section illustrating an alternative apparatusaccording to an embodiment of the present invention;

FIG. 2C is a cross section illustrating yet another apparatus accordingto an embodiment of the present invention;

FIG. 3A is a plan view illustrating a patterned conductive layer usefulin understanding the present invention;

FIG. 3B is a plan view illustrating a differently patterned conductivelayer useful in understanding the present invention;

FIG. 3C is a plan view illustrating an overlay of the plan views ofFIGS. 3A and 3B useful in understanding the present invention;

FIG. 3D is a plan view illustrating another overlay of the plan views ofFIGS. 3A and 3B useful in understanding the present invention;

FIGS. 4A and 4B are more detailed plan views of a portion of FIG. 3Duseful in understanding the present invention;

FIG. 5A is a perspective illustrating a step in a method of anembodiment of the present invention;

FIG. 5B is a perspective illustrating another step in a method of anembodiment of the present invention;

FIG. 5C is a perspective illustrating a structure in an embodiment ofthe present invention;

FIG. 6A is a cross section illustrating a method and structure accordingto embodiments of the present invention;

FIG. 6B is a cross section illustrating layer structures useful inunderstanding embodiments of the present invention;

FIG. 7 is a cross section illustrating an embodiment of the presentinvention;

FIGS. 8A-8F are successive cross sections illustrating a method of thepresent invention;

FIGS. 9A and 9B are flow diagrams illustrating a method according to anembodiment of the present invention;

FIG. 10 is a flow diagram illustrating another method according to anembodiment of the present invention;

FIG. 11 is a cross section illustrating electromagnetic fields in anembodiment of the present invention; and

FIG. 12 is a cross section illustrating a curved, flexible substrateuseful in an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIG. 1A according to an embodiment of the presentinvention, a transparent capacitor apparatus 5 includes a firsttransparent substrate 10 including a first patterned conductive layer 12having a first conductive material 14 located over the first transparentsubstrate 10 forming a first substrate structure 11. A dielectric layer30 is located over the first patterned conductive layer 12. A secondpatterned conductive layer 22 including a second conductive material 24is located over the dielectric layer 30. The pattern of the secondpatterned conductive layer 22 is different from the pattern of the firstpatterned conductive layer 12. The first and second patterned conductivelayers 12, 14 include gaps 44 defining the patterns. A secondtransparent substrate 20 is located over the dielectric layer 30, forexample over the second patterned conductive layer 22 forming a secondsubstrate structure 21. Portions 32 of the first conductive material 14of the first patterned conductive layer 12 overlap portions 32 of thesecond conductive material 24 of the second patterned conductive layer22. The various layers indicated can be formed directly on each other asindicated in FIG. 1A or other intervening layers can be incorporatedinto the multi-layer stack and included in the first and secondsubstrate structures 11, 21.

As shown in FIG. 1B, the overlapping portions 32 of the first and secondconductive materials 14, 24 in the first and second patterned conductivelayers 12, 22 form matching patterned electrical conductor(s) havingspatially matching conductive areas 34 and non-conductive areas 36separated by the dielectric layer 30. The non-conductive areas 36 of thefirst and second patterned conductive layers 12, 22 have encapsulatedcoalesced conductive material structures 16 that have a reducedcoalesced material surface area A over the first or second transparentsubstrates 10 or 20 compared to the conductive material in theconductive areas 34.

The patterned electrical conductors in the overlapping portions 32 formcapacitors 33 in the conductive areas 34. The non-conductive areas 36 donot conduct electricity from one side of the non-conductive area 36 toanother side and are electrically isolated from the conductive areas 34.In an embodiment, the first and second transparent substrates 10, 20 orthe first and second conductive materials 14, 24 in the conductive areas34 are largely planar and parallel so that the distance D between themis relatively constant, for example varying by less than 10%, less than1%, or less than 0.1%. The first and second conductive materials 14, 24can be formed directly on the first and second transparent substrates10, 20 and are largely planar in the conductive areas 34 but have a morethree-dimensional structure in the non-conductive areas 36 where thefirst and second conductive materials 14, 24 can form spherical-like,cylindrical-like, or ellipsoidal-like structures having a smallersurface area than the more planar first and second conductive materials14, 24 in the conductive areas 34.

FIG. 1B also illustrates a first encapsulating layer 18 formed over thefirst transparent substrate 10 and first patterned conductive layer 12to form the first substrate structure 11. A second encapsulating layer28 is located over the dielectric layer 30 that, together with thesecond transparent substrate 20 and second patterned conductive layer 22form the second substrate structure 21. The first and secondencapsulation layers 18, 28 protect the first and second conductivelayers 12, 22 from environmental damage, such as moisture, chemical, andmechanical damage.

The encapsulated coalesced conductive material structures 16 are formedby locally applying heat, for example with a laser, to the first andsecond conductive layer materials 14, 24 in the non-conductive areas 36.Heat can be applied together to both the conductive layer materials 14,24 in any non-conductive area 36 so that the first and second conductivematerials 14, 24 in the exposed non-conductive areas 36 melt. Surfacetension in the first and second conductive materials 14, 24 then causesthe melted first and second conductive materials 14, 24 to coalesce andform conductive material structures 16 having a reduced surface area Aand a more three-dimensional structure. The three-dimensional structurecan, in turn cause the first and second encapsulating layers 18, 28, andthe dielectric layer 30 to locally deform. If the first or secondtransparent substrate 10, 20 are flexible, they can also deform. Thefirst and second encapsulating layers 18, 28, and the dielectric layer30 can form a conformal layer over the coalesced conductive materialstructures 16. If, for example, the heating and deformation process isperformed under a reduced pressure or in a vacuum, or if the first andsecond transparent substrates 10, 20 or first and second patternedconductive layers 12, 22 are impermeable to ambient gases, little or nogas will pass through them. While pockets of vacuum can form in thefirst and second patterned conductive layers 12, 22, first and secondencapsulation layers 18, 28 or dielectric layer 30, if the materials ofthe first and second transparent substrates 10, 20, first and secondpatterned conductive layers 12, 22, first and second encapsulationlayers 18, 28 or dielectric layer 30 are at least somewhat plastic, theycan deform to form a conformal layer over or around the coalescedconductive material structures 16 in the non-conductive areas 36.

Many polymer materials are plastic in nature; indeed, such polymers areoften termed ‘plastics’, and can form such conformal coatings. Referringto the example of FIG. 1C, both the first transparent substrate 10 andthe first encapsulating layer 18 are sufficiently plastic to deform whenthe coalesced conductive material structures 16 are formed from thefirst conductive material 14. A similar plasticity can be used in thesecond transparent substrate 20 (not shown). Such a flexibility andplasticity is useful if the transparent capacitor apparatus 5 isflexible and intended to be curved, either once or repeatedly, e.g. asillustrated in FIG. 12 where the first transparent substrate 10 iscurved over its extent but maintains a relatively constant thickness T.Alternatively, one or the other, or both of the first and secondtransparent substrates 10, 20 can be rigid.

Referring to FIGS. 1B and 1C, because the volume of first and secondconductive materials 14, 22 are small compared to the first and secondtransparent substrates 10, 20, the first and second patterned conductivelayers 12, 22, the first and second encapsulation layers 18, 28, thefirst and second substrate 10, 20 and the first and second conductivematerials 14, 24 in the conductive areas 34 can remain largely parallel,separated by a relatively constant distance D. The first and secondconductive materials 14, 24 in the conductive areas 34 constitutecapacitors 33 (FIG. 1B) that have relatively constant separation andelectrical field strength in the conductive areas 34.

Either of the first and second transparent substrates 10, 20 can beglass, plastic, flexible glass, or any other transparent material thatis readily formed into sheets having a surface suitable for thedeposition of materials and other layers. The first and secondconductive materials 14, 24 can be deposited directly on a surface ofthe first and second transparent substrates 10, 20, for example by vapordeposition, screen printing, inkjet deposition, or sputtering to formthe first and second patterned conductive layers 12, 22. Suitablematerials include conductive metals or metal alloys, for example silver,gold, aluminum, tin, titanium, tungsten, and nickel or alloys thereof.The first and second conductive materials 14, 24 can be the samematerials. The first and second patterned conductive layers 12, 22 canbe patterned by photolithographic processes such as etching, orpattern-wise deposited, for example through evaporation or sputteringthrough a mask, by printing through a patterned mask, or by a patternedtransfer from another substrate. Such materials and deposition processesare known in the art.

First and second encapsulation layers 18, 28 can be flow-coated over thefirst and second patterned conductive layers 12, 22. The first andsecond encapsulation layers 18, 28 can be polymer or plastic, as can thedielectric layer 30. Methods of coating encapsulating materials, such asplastics, are well known in the art. Likewise, the dielectric layer 30can be flow coated over the first encapsulation 18 or first patternedconductive layer 12.

In one embodiment of the present invention, the first and secondtransparent substrates 10, 20 with first and second patterned conductivelayers 12, 22 are separately produced, located together in a stack, andthen laminated, with a dielectric layer 30 located between the first andsecond patterned conductive layers 12, 22. Either subsequent to orbefore the lamination, the first and second conductive materials 14, 24,are heated at the same time to form the coalesced conductive materialstructures 16 in the non-conductive areas 36 of the first and secondpatterned conductive layer 12, 22. Lamination is useful to providestructural integrity and environmental robustness and to reduce opticalreflections between layers. Likewise, to reduce reflections andrefractions from the various layers, it is useful to employ commonmaterials where possible. For example, the dielectric and encapsulatingmaterials can be the same material or constitute a single layer.

Alternatively as shown in FIGS. 8A-8F, and 9A and described furtherbelow, in another embodiment of the present invention, the firsttransparent substrate 10 can be produced with a first patternedconductive layer 12 formed thereon, a dielectric layer 30 formed overthe first patterned conductive layer 12, and a first encapsulating layer28 or second transparent substrate layer 20 formed over the dielectriclayer 30. A second patterned conductive layer 22 is then formed on thesecond encapsulating layer 28 or second transparent substrate 20 andanother second encapsulating layer 28 or second transparent substrate 20formed over the second patterned conductive layer 22. The first andsecond conductive materials 14, 24, are heated together to form thecoalesced conductive material structures 16 in the non-conductive areas36 of the first and second patterned conductive layer 12, 22.

In various embodiments, a variety of material and layer structures canbe employed with the present invention. In particular, the dielectriclayer 30 can be made of a substrate, e.g. first substrate 10 or secondsubstrate 20 or both first transparent substrate 10 and secondtransparent substrate 20, or an encapsulation layer, if present, e.g.first encapsulation layer 18 or second encapsulation layer 28, or bothfirst encapsulation layer 18 and second encapsulation layer 28.

Referring to FIG. 2A, the dielectric layer 30 is provided in addition tofirst and second encapsulation layers 18 and 28. The first and secondtransparent substrate 10, 20 are on the outsides of the transparentcapacitor apparatus 5. In this embodiment, it can be convenient to formthe first patterned conductive layer 12 on the first transparentsubstrate 10, and then coat the first patterned conductive layer 12 withthe first encapsulation layer 18. Separately, the second patternedconductive layer 22 is formed on the second transparent substrate 20,and then the second patterned conductive layer 22 is coated with thesecond encapsulation layer 28. The dielectric layer 30 is either coatedon either the first or second encapsulation layers 18, 28 and the firstand second substrate structures 11, 21 (i.e. layers 10, 12, 18 andlayers 20, 22, 28) are laminated together or the dielectric layer 30 isprovided as a separate layer and laminated together with first andsecond substrate structures 11, 21.

Referring to FIG. 2B, the dielectric layer 30 includes the first andsecond transparent substrates 10, 20. In this embodiment, the first andsecond substrate structures 11, 21 are each inverted so that the firstand second encapsulation layers 18, 28 are on the outsides of thetransparent capacitor apparatus 5. Alternatively, one of the first orsecond substrate structures 11, 21 can be inverted and the other is notinverted (not shown). This alternative arrangement would use a substratestructure (either 11 or 21) from FIG. 2A and a substrate structure(either 21 or 11) from FIG. 2B. This embodiment can be constructed as isthe FIG. 2A transparent capacitor apparatus 5 with the modification thatthe first and second substrate structures 11 and 21 are inverted beforethe lamination step.

Referring to FIG. 2C, the dielectric layer 30 includes or serves as thefirst and second encapsulation layers 18, 28. In this embodiment, thedielectric layer 30 is coated on either or both of the first or secondpatterned conductive layers 12, 22, or provided as a separate layer, andthen laminated with the first and second substrate structures 11, 21(that, in this example, do not include separate encapsulation layers).

Thus, in an embodiment, the dielectric layer 30 is separate from thefirst or second encapsulation layers 18, 28 and the first or secondtransparent substrates 10, 20. In another embodiment, the dielectriclayer 30 serves as the first or second encapsulation layers 18, 28 orboth the first and second encapsulation layers 18, 28. Alternatively,the first or second encapsulation layers 18, 28 or both the first andsecond encapsulation layers 18, 28 serve as a dielectric layer 30 or asthe first or second transparent substrates 10, 20. In yet anotheralternative, the first or second transparent substrates 10, 20 serve asthe dielectric layer 30.

In any, or all, of these embodiments, the conducting and non-conductiveareas 34, 36 (FIG. 1B) can be formed after the first and secondsubstrate layers 11, 21 are laminated with the dielectric layer 30 orcoated. Alternatively, the conducting and non-conductive areas 34, 36(FIG. 1B) can be formed before the first and second substrate layers 11,21 are laminated with the dielectric layer 30. In this example, however,at least the first and second substrate structures 11, 21 should belocated and secured together so that the non-conductive areas 36 can beformed together in both the first and second conductive layers 12, 22.In this embodiment, the dielectric layer 30 can be located between, andin contact with, the first and second substrate structures 11, 21 whenthe non-conductive areas 36 are formed. In other embodiments the firstand second substrate structures 11, 21 are not laminated. In anotherembodiment, a lamination or annealing step is performed after thenon-conductive areas 36 are formed.

Referring to FIGS. 3A, 3B, 3C, and 3D, the first and second patternedconductive layers 12, 22 are shown with plan views of the first andsecond transparent substrates 10, 20. Referring first to FIG. 3A, thefirst patterned conductive layer 12 has first conductive material 14patterned into vertical first electrodes 40 formed on first transparentsubstrate 10. As shown in the detail portion of FIG. 3A, the verticalfirst electrodes 40 are separated by inter-electrode gaps 44. As shownin FIG. 3B, the second patterned conductive layer 22 has secondconductive material 24 patterned into horizontal second electrodes 42formed on second transparent substrate 20 that have a different patternfrom the vertical first electrodes 40 (FIG. 3A). A variety of differentpatterns can be used in a corresponding variety of embodiments. A usefulpattern uses vertical and horizontal electrodes 40, 42 that have thesame pattern with different orientations, in the example of FIGS. 3A-3Deach differing by a 90-degree rotation in the plane corresponding toeither the first or second patterned conductive layer 12, 22, to formrow 42 and column 40 electrodes. In other words, the first and secondelectrodes 40, 42 have orthogonal patterns that can be otherwise similaror identical. As shown in the detail portion of FIG. 3B, the horizontalsecond electrodes 42 are separated by inter-electrode gaps 44. Theinter-electrode gaps 44 can be the same or different for the first andsecond patterned conductive layers 12, 22.

FIG. 3C is a plan view of FIG. 3A overlaid over FIG. 3B, for example asillustrated in the cross section of FIG. 1A, to form the transparentcapacitor apparatus 5. As shown in FIG. 3C, the first transparentsubstrate 10 is located over the second transparent substrate 20 and thefirst patterned conductive layer 12 and first conductive materials 14form vertical first column electrodes 40 located over and adjacent tothe second patterned conductive layer 22 and first conductive materials24 forming horizontal second row electrodes 42 separated by a dielectriclayer (not shown). The column electrodes 40 and row electrodes 42 formorthogonal arrays of electrodes that can be matrix addressed as iscommonly practiced in the display arts, for example with active-matrixflat-panel liquid crystal or organic light-emitting diode displays.Referring also to FIG. 3D and to FIG. 1A, the overlapping portions 32 ofthe row and column electrodes 42, 40 include conductive areas thatconstitute capacitors (not shown). As shown in FIG. 3C, electricalconnections 70 are connected to the row and column electrodes 42, 40 andto a controller 80. The controller 80 includes circuits adapted toprovide electrical power, charge, or electrical sensing to the row andcolumn electrodes 42, 40 and thereby to the capacitors (not shown) forexample by using matrix control to electrically activate one rowelectrode 42 or one column electrode 40 or to electrically activate allof the column electrodes 40 or row electrodes 42 while an orthogonalelectrode is activated.

Referring to FIGS. 4A and 4B, an overlapping electrode portion 32forming a capacitor 33 is illustrated in more detail. As noted above,the first and second patterned conductive layers 12, 22 (not shown) arepatterned to form first and second electrodes 40, 42 having differentpatterns separated by inter-electrode gaps 44. Another, differentpatterned structure is formed within the overlapping electrode portions32 in each of the first and second patterned conductive layers 12, 22.In this other patterned structure, both the first and second patternedconductive layers 12, 22 have the same pattern formed together by thelocal application of heat. The patterned, local application of heatmelts the first and second conductive materials 14, 24 and causescoalesced conductive material structures 16 to form non-conductive areas36 in the overlapping electrode portion 32 (FIG. 4B). Areas that are notheated remain conductive areas 34.

A variety of other patterned structures can be formed, for example agrid of orthogonal conductive areas 34 can be interspersed withrectangular non-conductive areas 36 (as shown in FIG. 4B).Alternatively, a hexagonal pattern of conductive areas 34 can beinterspersed with hexagonal non-conductive areas 36 (not shown). Theoverlapping electrode portions 32 thus include non-conductive areas 36and conductive areas 34 constituting capacitors 33. Since touch screensare operated by noting changes in capacitance rather than by storing aspecific capacitive charge or having a specific capacitor structure, acapacitor 33 with a variable structure is effective in suchapplications.

It is important that the conductive areas 34 in the first patternedconductive layer 12 be aligned with the conductive areas 34 in thesecond patterned conductive layer 12 to effectively enable the capacitor33 to store charge. It is a useful feature of the present invention thatby forming the non-conductive areas 36 in both the first and secondpatterned conductive layers 12, 22 together, such alignment between theconductive areas 34 in the first and second patterned conductive layers12, 22 is readily achieved without subsequent layer alignment or processstep alignment as is found in conventional photolithographic processes.

The transparency of the overlapping portion 32 is determined by therelative area of the conductive areas 34 and the non-conductive areas36. Assuming that the conductive areas 34 (coated with a conductivematerial such as metal) are opaque and that the non-conductive areas 36are transparent, a simple geometric calculation can determine thetransparency of the overlapping portion 32 by determining the ratio ofthe conductive area 34 to the non-conductive area 36. Similarly, theconductive area 34 determines the capacitance of the capacitor 33,together with the conductivity of the conductive materials (i.e.thickness and material composition) and spacing between the first andsecond patterned conductive layers 12, 22.

Because the capacitor 33 stores charge in only the conductive areas 34,an electrical field 38 applied across the first and second patternedconductive layers 12, 22 will not be uniform, unlike conventionalthin-film capacitors found in the prior art. Referring to FIG. 11, theelectrical field 38 of a capacitor 33 formed from patterned first andsecond conductive materials 14, 24 in first and second patternedconductive layers 12, 22 on first and second transparent substrate 10,20 is illustrated in cross section. Coalesced conductive materialstructures 16 are located in the non-conductive areas 36 within a firstencapsulation layer 18 but, because coalesced conductive materialstructures 16 are electrically isolated from the conductive material inthe electrodes, they do not carry an electrical field 38. Thus, theelectrical field 38 of a capacitor 33 according to the present inventionis present only in or near the conductive areas 34 and is variableacross the extent of the overlapping portions 32.

The transparency and conductivity of the transparent capacitor apparatus5 of the present invention depends on the percentage of the area coveredby the first and second patterned conductive layers 12, 22. As notedabove, within the overlapping portions 32 this is determined in part bythe relative areas of the conductive and non-conductive areas 34, 36.However, the first and second electrodes 40, 42 in the non-overlappingportions 32 also affect the overall transparency of the transparentcapacitor apparatus 5. To improve the transparency of the transparentcapacitor apparatus 5, it can be helpful to make the non-conductiveareas 36 as large as possible. The resolution of the transparentcapacitor apparatus 5 is determined, in part, by the number ofcapacitors 33, and hence the number of first and second electrodes 40,42. It is desirable, therefore, to increase the number and total area ofthe overlapping portions 32 and to reduce the non-capacitive area of thefirst and second electrodes 40, 42 to increase the transparency andresolution of the transparent capacitor apparatus 5. However, as will beappreciated by those skilled in the electrical arts, decreasing theconductive areas 34 to improve transparency will also decrease thecapacitance of the capacitors 33.

The first and second electrodes 40, 42 can be made of the sameconductive material as the first and second conductive materials 14, 24in the conductive areas 34 of the overlapping portions 32. The first andsecond electrodes 40, 42 can be patterned in the non-capacitive areasusing the same technique as for the capacitors 32. Because the patternsfor the first and second electrodes 40, 42 are different, the firstpatterned conductive layer 12 and second patterned conductive layer 22are patterned separately in at least some of the non-capacitive areasbefore the first and second transparent substrates 10, 20 are securelylocated together or laminated. Alternatively, the first and secondelectrodes 40, 42 can be made in other ways, for example throughconventional deposition methods such as evaporative deposition andphotolithography or deposition through a mask.

Because the first and second electrodes 40, 42 do not have to becarefully aligned (although they overlap to form capacitors 33), theycan be made separately and with reduced precision and accuracy. Incontrast, within the overlapping portions 32, alignment between thefirst and second patterned conductive layers 12, 22 is critical tocreate well-controlled capacitive structures. The first and secondconductive material 14, 24 in the overlapping portions 32 should beprecisely aligned in parallel layers. This is normally achieved in theprior art by using high-precision patterning and processing equipment(e.g. clean-room photolithography equipment). In contrast, according toembodiments of the present invention, by patterning both the first andsecond patterned conductive layers 12, 22 together in the overlappingportions 32 with locally applied heat, the present inventionautomatically aligns the first and second patterned conductive layers12, 22 in the overlapping portions 32 and thereby reduces equipmentalignment and processing requirements and provides a significantimprovement over the prior art.

Referring to FIG. 6A, in a further embodiment of the present invention,one or more bi-layer structures 29 are formed to increase theconductivity of the first and second patterned conductive layer 12, 22without reducing the transparency of the transparent capacitor apparatus5. Each bi-layer 29 includes a first or second patterned conductivelayer (e.g. 12 a, 12 b or 22 a, 22 b) and a corresponding first orsecond encapsulation layer (e.g. 18 a, 18 b or 28 a 28 b). The bi-layers29 are formed between the first or second transparent substrates 10, 20,and the dielectric layer 30. The bi-layers 29 formed between the firsttransparent substrate 10 and the dielectric layer 30 have a firstpattern matching the first patterned conductive layer 12. The bi-layers29 formed between the second substrate 20 and the dielectric layer 30have a second pattern matching the second patterned conductive layer 22.The first patterned conductive layer 12 and first encapsulating layer 18illustrated in FIGS. 1B and 2A also form bi-layers as do the secondpatterned conductive layer 22 and second encapsulating layer 28. Thebi-layers 29 on each side of the dielectric layer 30 are simply repeatedpatterned conductive layers with encapsulating layers having matchingpatterns.

As shown in FIG. 6A, the application of locally applied heat, forexample with a laser, causes the first and second conductive material14, 24 in each of the first and second patterned conductive layers 12,12 a, 12 b and 22, 22 a, 22 b of the bi-layers 29 to melt and coalesceinto separate coalesced conductive material structures 16, therebyrendering the local area a non-conductive area 36 while the remainingconductive areas 34 continue to conduct electricity and form additionallayers of a non-interdigitated multi-layer capacitor 33. The variousfirst patterned conductive layers 12, 12 a, 12 b of the bi-layers 29 areelectrically connected as are the various second patterned conductivelayers 22, 22 a, 22 b of the bi-layers 29, for example as shown in FIG.6B by extending an edge of each of the bi-layers 29 slightly beyondthose bi-layers 29 above it to provide space for an electricalconnection to the first patterned conductive layers 12, 12 a, 12 b (orsecond patterned conductive layers 22, 22 a, 22 b, not shown) on thefirst encapsulating layer 18 or first transparent substrate 10 below.

According to a further embodiment of the present invention, at least oneof the bi-layers is different from another bi-layer. The thicknesses ofthe first and second encapsulation layer (e.g. 18, 18 a, 18 b, 28, 28 a,28 b) can be different as can the thicknesses of the first and secondconductive layers 12, 12 a, 12 b, 22, 22 a, 22 b). Alternatively, theconductive layer in one bi-layer can be a different material from theconductive layer in another bi-layer. This can be useful, for example,in controlling reflection from the conductive layers. When used with adisplay device, it is useful to absorb ambient light while emittinglight from the display. In this example, assuming that the secondtransparent substrate 20 is exposed to the ambient atmosphere while thefirst transparent substrate 10 is adjacent to a display device, it ishelpful if the second patterned conductive layer 22 b absorbs lightwhile the remaining first and second patterned conductive layers 12, 12a, 12 b, 22, 22 a reflect light. Hence, second conductive layer material24 b can be darker (e.g. made of nickel) while the other first andsecond conductive layer materials 14, 24 are lighter (e.g. made ofsilver). Alternatively, a patterned light-absorbing layer can be formedover the second conductive layer material 24 b, for example byevaporating or otherwise coating light-absorbing material over thesecond conductive layer material 24 b and using the same heating processused to pattern the second conductive layer material 24 b.

Just as was illustrated and discussed with respect to FIGS. 2A-2C, theencapsulating, substrate, and dielectric layers can serve variousfunctions depending on their position in the layer stack. For example,first and second encapsulation layers 18, 28 or first and secondtransparent substrate 10, 20 can also serve as a dielectric layer iflocated between the first and second patterned conductive layers 12, 22.First and second encapsulation layers 18, 28 can also serve as a firstand second transparent substrates 10, 20, or vice versa, depending onthe positions of the layers in the layer stack.

In one embodiment of the structure illustrated in FIG. 6A, one or moreof the encapsulation layers 18, 28 or the transparent substrates 10, 20is a dielectric and the capacitor 33 is a multi-plate capacitor in whichthe plates are not inter-digitated. In another embodiment, one or moreof the first and second encapsulation layers 18, 28 or the first andsecond transparent substrates 10, 20 are electrically conductive andincrease the conductivity of the first and second patterned conductivelayers 12, 22. Both dielectric and electrically conductive encapsulationmaterials, for example polymers are known in the art.

The first and second patterned conductive layers 12, 22, particularlybut not exclusively in the conductive areas 34, can form an opticalinterference filter. If the separation between the various patternedconductive layers 12, 22 (e.g. the encapsulation layers 18, 28 thicknessand dielectric layer 30) is carefully chosen, as are the thicknesses ofthe first and second conductive materials 14, 24, desirable opticaleffects, such as filtering or absorbing particular frequencies can beachieved. The thicknesses of the first and second conductive materials14, 24 can be different for the different bi-layers 29 as can thethicknesses of the encapsulation layers 18, 28. One useful filteringeffect can increase the absorption of a laser whose frequency is chosento heat the conductive materials 14, 24 so as to melt the conductivematerials 14, 24 and form the non-conductive areas 36. Other filteringeffects can be chosen to absorb or transmit ambient light or lightemitted from a display device associated with the transparent capacitorapparatus 5. Multi-layer optical interference filters are well known inthe art.

In a further embodiment of the present invention, the first transparentsubstrate 10 or the second transparent substrate 20 is a display devicecover or substrate or is affixed to a display device cover or substrate.Referring to FIG. 7, a display device 50 includes a substrate 56,light-control layers 54 (e.g. a liquid crystal device or organiclight-emitting diode device), and a display device cover 52. The displaydevice cover 52 is also the substrate 10 of the transparent capacitorapparatus 5 that includes the first and second patterned conductivelayers 12, 22, dielectric layer 30 and second transparent substrate 20.In such an arrangement with a combined display 50 and transparentcapacitive apparatus 5, as is also illustrated in FIG. 3C, a usefulembodiment of the present invention includes the first patternedconductive layer 12 orthogonal to the second patterned conductive layer22 so that overlapping portions 32 of the first and second patternedconductive layers 12, 22 form an addressable array of capacitors 33 (notshown) having row and column electrodes 40, 42. In this embodiment,non-conductive encapsulation layers 18, 28 are useful. The capacitors 33(not shown) can be addressed as an x, y array of capacitive elementsusing matrix addressing schemes and electrical connectors connecting therow and column electrodes 42, 40 to a controller 80 that provideselectrical power or electrical sensing circuits for controlling thecapacitor array and detecting and locating localized changes in thecapacitance of any one or more of the capacitors 33 (not shown) in thearray. In other embodiments of the present invention, the transparentcapacitor apparatus 5 forms a capacitive touch screen.

According to an embodiment of the present invention, a method of makinga transparent capacitor apparatus 5 includes providing a firsttransparent substrate 10 including a first patterned conductive layer 12having a first conductive material 14 over the first transparentsubstrate 10 in a first pattern; providing a second transparentsubstrate 20 including a second patterned conductive layer 22 having asecond conductive material 24 over the second transparent substrate 22in a second pattern different from the first pattern; locating the firsttransparent substrate 10 over the second transparent substrate 20 sothat the first patterned conductive layer 12 is effectively parallel tothe second patterned conductive layer 22; and patterning overlappingportions 32 of both the first patterned conductive layer 12 and thesecond patterned conductive layer 22 at the same time into spatiallymatching conductive areas 34 forming capacitors 33 and non-conductiveareas 36 by locally applying heat to melt the first and secondconductive materials 14, 24 in the non-conductive areas 36 of both thefirst conductive layer 14 and the second conductive layer 24 so that thesurface tension of the first and second conductive materials 14, 24causes the first and second conductive materials 14, 24 to coalesce intostructures 16 with a reduced conductive layer area.

Various methods of the present invention are illustrated in theperspectives of FIGS. 5A-5C, the cross sections of FIGS. 8A-8F and theflow diagrams of FIGS. 9A-9B and FIG. 10. Referring first to FIGS. 5A,8A, and 9A, a first transparent substrate 10 is provided in step 100.Likewise, a second transparent substrate 20 is provided in step 120. Thefirst and second transparent substrates 10, 20 can be any usefultransparent material having a surface suitable for forming the variouslayers of the present invention, for example glass or plastic. The firstand second transparent substrates 10, 20 can be flexible or rigid. Suchsubstrates are commercially available.

The first transparent substrate 10 is coated with a first conductivematerial 14 (FIGS. 5A, 8B) in step 105 and the second transparentsubstrate 20 is coated with a second conductive material 24 (FIG. 5A,8D) in step 125. The first and second conductive materials 14, 24 can bethe same materials, for example a metal or metal alloy and can bedeposited, for example, by evaporation, inkjet deposition, coatingdispersions of conductive materials and drying them, or by screenprinting. In various embodiments of the present invention, the depositedfirst and second conductive materials 14, 24 are deposited in first andsecond conductive patterns or are patterned after deposition (e.g. asfirst and second orthogonal electrodes on the first and secondsubstrates 10, 20) in steps 115 and 135 to form first and secondpatterned conductive layers 12, 22 (FIG. 5B, 8D). Photolithographicmethods are known to accomplish patterning such layers, for examplethin-film layers.

The pattern of the first conductive layer 12 is different from thepattern of the second conductive layer 22. The difference can be anorientation and the first and second conductive layers 12, 22 can formorthogonal arrays of electrodes 40, 42 separated by inter-electrode gaps44 (FIG. 5B). The deposited conductive materials 14, 24 on first andsecond transparent substrates 10, 20 can be made or patternedindependently, together, sequentially, at the same time, or supplied bya third party, with or without encapsulating or dielectric layers.

First and second encapsulating layers 18, 28 can be provided or coatedover the first and second patterned conductive layers 12, 22 in steps110 and 130 (FIG. 8C), as can a dielectric layer 30 (FIG. 5A, 5B, 8D) insteps 111 and 131. The dielectric layer 30 can be a first or secondencapsulation layer 18 or 28 so that, in an embodiment, a separate step111 or step 131 is optional. The layers can be provided separately andthen laminated together or can be sequentially coated (e.g. asillustrated in the sequence of FIGS. 8A-8F). If the layers aresequentially coated as shown in FIG. 8D, conductive materials aredeposited on the dielectric layer 30 and patterned (or deposited in apattern) to form the second patterned conductive layer 22. A secondencapsulating layer 28 or second transparent substrate 20 is formed overthe second patterned conductive layer 22 (FIG. 8E).

If the first and second substrates 10, 20 or dielectric layer 30 areseparately provided, they are located over each other with thedielectric layer 30 between the first and second patterned conductivelayers 12, 22 (e.g. as illustrated in FIG. 5B) in step 140 and laminatedin step 150. Alternatively, the first and second transparent substrates10, 20 or dielectric layer 30 are secured together and then laminatedafter the non-conductive areas are formed. By laminating is meant thatthe various layers are permanently secured together, for example byheating and pressing the layers together, with or without additionaladhesives. The various materials of the layers when formed or depositedcan have adhesive properties, for example plastics can melt slightly andadhere to each other or other materials when exposed to heat orpressure.

Referring to the flow diagram of FIG. 9B, the detail perspective of FIG.5C representing the circled portions of FIG. 5B, and FIG. 8F, the firstand second transparent substrates 10, 20 and the dielectric layer 30 arelocated over each other as noted above together with a heat source instep 160 and then locally exposed in step 165 to a patterned heatsource, for example by a laser 90 emitting a laser beam 92 topattern-wise heat the first and second patterned conductive layers 12,22 together. If multiple bi-layers are present (FIG. 6A) all of thefirst and second patterned conductive layers 12, 12 a, 12 b, 22, 22 a,22 b are pattern-wise heated at the same time. The first and secondmaterials 14, 24 of the first and second patterned conductive layers 12,12 a, 12 b, 22, 22 a, 22 b in the non-conductive areas 36 melt in step170 and, under the force of surface tension, coalesce intothree-dimensional structures in step 175 to form coalesced conductivematerial structures 16 that no longer conduct electricity across theextent of the non-conductive areas 36. The patterned heat source 90(e.g. the laser) can scan across the extent of the non-conductive areas36 (e.g. by moving the laser beam 92 as indicated with the dashed arrowin FIG. 8F) one or more times in one or more directions to ensure thatthe conductive materials in the area are completely coalesced. Suchscanning techniques are known in the art.

Referring in more detail to the example illustrated in the perspectiveof FIG. 5C, the first transparent substrate 10 has conductive materials14 patterned to form a first conductive layer 12 thereon. The firstpatterned conductive layer 12 in this example forms two vertical(column) electrodes 40 and the second patterned conductive layer 22 inthis example forms three horizontal (row) electrodes 42 separated by aninter-electrode gap 44. The first column and second row electrodes 40,42 do not have to be aligned, but they do have to overlap to formoverlapping portions 32 in which aligned capacitors 33 are formed. Inthis example, six capacitors 33 are formed that have conductive areas 34separated by non-conductive areas 36. The non-conductive areas 36 arealigned and formed together by the local application of heat, forexample from a laser beam, and include coalesced conductive materialstructures 16. Because the non-conductive areas 36 are formed after thefirst and second transparent substrates 10, 20 are laminated together(or at least secured together so that the first and second transparentsubstrates 10, 20 do not move relative to each other), the first andsecond transparent substrates 10, 20 do not themselves have to becarefully aligned, nor do the first and second electrodes 40, 42 have tobe carefully aligned (so long as they overlap to form overlappingportions 32).

In a further method of the present invention, the first patternedconductive layer 12 is laminated to the second patterned conductivelayer 22 with a dielectric layer 30 located between the first patternedconductive layer 12 and the second patterned conductive layer 22. Thelaminating can be done before or after the heat is locally applied toform the non-conductive areas 36, so long as the various layers aresecurely located together.

After the non-conductive areas 36 are formed, the first transparentsubstrate 10, second transparent substrate 20, and dielectric layer 30and other layers can be annealed or further processed as a group tofurther improve their environmental robustness or resistance tode-lamination. Other layers can also be added, for example furtherencapsulation layers or optical treatments such as anti-reflectivelayers as are known in the art.

In a further embodiment of the present invention and as illustrated inFIG. 6A, a third transparent substrate (e.g. a first encapsulation layer18 a) including a third conductive layer (e.g. first patternedconductive layer 12 a) having a third conductive material (e.g. firstconductive material 14) over the third transparent substrate in thefirst pattern is provided. The third transparent substrate (firstencapsulation layer 18 a) is located with the first transparentsubstrate 10 so that the third patterned conductive layer (12 a) is overor under the first patterned conductive layer 12, (formed on the firsttransparent substrate 10) in effectively parallel planes. Overlappingportions 32 of both the first patterned conductive layer 12 and thethird patterned conductive layer 12 a are patterned at the same timeinto spatially matching conductive areas 34 and non-conductive areas 36by locally applying heat to melt the first and third conductivematerials in the non-conductive areas 36 of both the first patternedconductive layer 12 and the third patterned conductive layer 12 a sothat surface tension of the first and third conductive materials causesthe first and third conductive materials to coalesce into coalescedconductive material structures 16 with a reduced conductive layer area.This process of providing a patterning bi-layer 29, for example asillustrated in FIG. 6A can be repeated on either side of the dielectriclayer 30. The bi-layers 29 can be provided separately and combined withthe other layers of the present invention or can be formed as part ofrepeated coating steps to sequentially build the structures disclosedherein. Likewise, the bi-layers 29 can be laminated separately and thencombined with the other layers of the present invention or can belaminated together with the other layers of the present invention.

A method of the present invention further includes coating the firstconductive materials 14 on the first transparent substrate 10,patterning the first conductive layer 12, coating the second transparentsubstrate 20 over the first patterned conductive layer 12, patterningthe second conductive layer 24, and patterning the first conductivelayer 12 and the second conductive layer 22 together into matchingconductive areas 34 and non-conductive areas 36.

As shown in FIG. 3C, in another embodiment of the present invention, afirst electrical connection to the first patterned conductive layer 12is formed. Likewise, a second electrical connection to the secondpatterned conductive layer 22 is formed. The first and second electricalconnections are electrically connected to an electrical power source orelectrical sensing device.

In further embodiments of the present invention and as illustrated inthe flow diagram of FIG. 10 and the cross section of FIG. 7, after thetransparent capacitive apparatus 5 is annealed (step 180) or otherwisecompleted, it can be provided as part of a display system 60 having adisplay including a display substrate 56, a light-control layers 54, anda display cover 52. Alternatively, the transparent capacitive device 5can be made as part of a display 50 or as part of a display systemmanufacturing process.

A display 50 (or a partially complete display device) is provided instep 200. The transparent capacitive apparatus 5 is assembled in step205 as part of the display 50, for example with the first transparentsubstrate 10 as the cover of the display 50. The first patternedconductive layer 12, dielectric layer 30, second patterned conductivelayer 22 and second transparent substrate 20 are provided on the firsttransparent substrate 10. This is useful for a top-emitter display thatemits or controls light seen through the display cover 52 and in liquidcrystal displays that have a back light. Alternatively, the secondtransparent substrate 20 of the transparent capacitive apparatus 5 isassembled as the display cover of 52. In other embodiments, the first orsecond transparent substrate 10, 20 of the transparent capacitiveapparatus 5 is assembled as the substrate 56 of the display 50. This isuseful for a bottom-emitter display device that emits or controls lightseen through the display substrate 56. Alternatively, the first orsecond transparent substrate 10, 20 of the transparent capacitiveapparatus 5 is affixed to the display cover 52 or display substrate 56.

Once the display system 60 is assembled, electrical connections can bemade to the electrodes of the transparent capacitive apparatus 5 (andthe display 50) in step 210. The electrical connections are connected toa controller in step 215 and electrical power and signals provided tothe transparent capacitive apparatus 5 in step 220. The providedelectrical power and signals are used to test the capacitance of thecapacitors 33, for example by scanning the array of capacitors under thecontrol of the controller, in step 225. This measurement provides abaseline capacitance value for each capacitor.

A user can then touch or otherwise locate a conductive element (e.g. oneor more fingers) near the transparent capacitive apparatus 5 in step 230to modify the local electrical field near one or more of the capacitors33 and thereby modify the capacitance of the nearby capacitors 33. Theprovided electrical power and signals are used to test the capacitanceof the capacitors a second time in step 235 and a change in capacitanceof one or more of the capacitors is determined in step 240 by comparingthe corresponding capacitance measurements to the baseline valuesmeasured in the absence of the conductive element. By locating thecapacitor(s) having the changed capacitive values, the location of thetouch can be determined in step 245. The transparent capacitiveapparatus, according to an embodiment of the present invention, thusprovides a capacitive touch screen useful in combination with a display.

The characteristics of the transparent capacitive apparatus 5 aredetermined by a number of factors. The transparency is determined by thetransparency of the first and second transparent substrates 10, 20, thedielectric layer 30, and any encapsulation layers. The transparency isalso determined by the amount of area that is covered by capacitors 33and the ratio of conductive areas 34 to non-conductive areas 36 in thecapacitors 33. The electrodes also reduce transparency. Thus, in orderto make the transparent capacitive apparatus 5 as transparent aspossible, it is useful to make the non-conductive areas 36 as large aspossible and the electrodes and conductive areas 34 as small aspossible. However, this reduces the conductivity of the transparentcapacitive apparatus 5 and thereby decreases the signal-to-noise ratioof a capacitor sensing signal.

The conductivity of the transparent capacitive apparatus 5 is determinedby the conductivity of the conductive materials, the thickness of theconductive materials in the electrodes and conductive areas, and thearea of the electrodes and conductive areas. Thus, by increasing thethickness and area of the conductive materials, conductivity is improvedat the expense of transparency.

The present invention provides an improved transparency and conductivityof a transparent capacitive apparatus be enabling multiple layers ofaligned conductors to form capacitors that, because they are aligned, donot reduce transparency. Hence, by adding additional layers ofconductive materials in alignment, conductivity is improved. While anyencapsulation layers reduce transparency, that effect is relativelysmall compared to the reduction in transparency due to the conductivematerials. Using methods of the prior art, it is difficult to makethin-films of conductive materials (such as metals), thick enough toprovide adequate conductivity and with sufficiently fine lines as to beinvisible to a user. Likewise, multiple layers are difficult to achievewithout very expensive photolithographic equipment and multipleprocessing steps. Transparent conductive materials (e.g. metal oxides)do not have the desired conductivity and transparency for manyapplications. Hence, the present invention provides improvedtransparency and conductivity for a transparent capacitive apparatus,while reducing manufacturing costs.

The present invention has been demonstrated experimentally. In a firstexperiment, a 0.1 mm substrate of polyethylene teraphthalate was coatedwith a metal nickel layer of approximately 70 nm with a surfaceresistance of 6.8+/−0.2 ohms/square and processed by using an 830 nminfrared laser having a 2.5 μm spot size to ablate gaps of approximately5 μm wide in the metal nickel layer forming electrode lines of 2.5 mm.The patterned metal nickel layer was spin coated with a 10% solution byweight of polyvinylpyrolidine (PVP) in isopropyl alcohol (IPA) at 3000rpm. A second, identical substrate was prepared and positioned with itspolymer-coated face in contact over the first substrate coated face andwith a 90 degree relative orientation so that the electrodes on thefirst substrate were at 90 degrees with respect to the electrodes on thesecond substrate. The oriented substrates were located within a fixtureand held in place and together with a vacuum platen. The 830 nm infraredlaser was scanned image-wise over the oriented substrates to heathexagonal portions of the metal layer to coalesce the metal in theheated portions, leaving conductive hexagonal grid line areas ofapproximately 25 μm wide separating hexagonal transparent,non-conductive areas having sides approximately sides 377 μm in length.The transparent non-conductive areas were visually transparent with ashadow area (space-to-grid) corresponding to a nominal transparency of92%. The grid patterns were formed on the first and second substrate inperfect registration as observed in transmission or reflection mode withan optical microscope. The conductive hexagonal grid lines separatelyprepared on Ni coated substrates (initially 6.8+/−0.2 ohms/square) asabove but exposed one at a time had a surface resistivity of 272ohms/square after coalescence patterning.

In a second experiment, a 0.1 mm substrate of polyethylene teraphthalatewas coated with a metal nickel layer of approximately 70 nm with asurface resistance of 6.8+/−0.2 ohms/square and processed. Theunpatterned metal nickel layer was spin coated with a 7.5% solution ofpolymethylcyanoacrylate-co-polyethylcyanoacrylate in a 1:1 mixture byweight of cyclopentanone and acetonitrile at 3000 rpm. The substrate waslocated within the fixture and held in place with the vacuum platen. The830 nm infrared laser was image-wise scanned over the orientedsubstrates to coalesce the nickel in parallel lines separatingelectrodes. The electrodes had a width of approximately 2.5 mm separatedby non-conductive coalesced gaps of approximately 11 μm. A secondsubstrate was prepared in the same way and positioned with adjacentpolymer-coating face-to-face over the first substrate and with a 90degree relative orientation so that the electrodes on the firstsubstrate were at 90 degrees with respect to the electrodes on thesecond substrate. The oriented substrates were located within thefixture and held in place with a vacuum platen. The 830 nm infraredlaser was image-wise scanned over the oriented substrates to heathexagonal portions of the metal layer to coalesce the metal in theheated portions, leaving conductive hexagonal grid line areas ofapproximately 25 μm wide separating hexagonal transparent,non-conductive areas having sides approximately sides 377 μm in length.The grid patterns were formed on the first and second substrate inessentially perfect registration as observed with optical microscopy.

By employing multiple bi-layers for each substrate, the resistivity canbe reduced by a factor corresponding to the number of bi-layers withoutsignificantly affecting the transparency of the device, for examplegiving a resistivity of 90 ohms per square with two bi-layers withoutincreasing the nominal transparency of 92%. Further improvements inconductivity without significantly reducing transparency can be made byusing more conductive metals, better quality laser exposure providingcleaner and finer lines, and using electrically conductive encapsulatinglayers. Transparency and optical clarity can be improved by reducing thethickness of the encapsulating, dielectric, and substrate layers.

The present invention provides apparatus and an improved method forproviding increased conductivity and transparency to the electrodes of acapacitive device that is scalable to large sizes, avoids heatingmaterials in emissive locations to high temperatures, and avoids the useof chemical processes. By employing multiple layers of aligned patternedconductors separated by intervening layers to form electrodes, conductorconductivity can be improved to a desired extent. By using heat-inducedcoalescence to pattern the conductors in an electrode, no chemical orphotolithographic processes are needed, alignment of the differentconductive layers in the electrodes is provided in a single step, theproduction of particulate contamination eliminated, and the metal layerscan be made relatively transparent. By integrating the present inventionas a display substrate or cover, a layer of material can be eliminated,reducing reflections and optical interference.

The invention has been described in detail with particular reference tocertain embodiments thereof, but it will be understood that variationsand modifications can be effected within the spirit and scope of theinvention.

PARTS LIST

A coalesced material surface area

D distance

T thickness

5 transparent capacitor apparatus

10 first transparent substrate

11 first substrate structure

12, 12 a, 12 b first patterned conductive layer

14 first conductive material

16 coalesced conductive material structure

18, 18 a, 18 b first encapsulating layer

20 second transparent substrate

21 second substrate structure

22, 22 a, 22 b second patterned conductive layer

24 second conductive material

24 b dark conductive material

28, 28 a, 28 b second encapsulating layer

29 bi-layer

30 dielectric layer

32 overlapping portions

33 capacitor

34 conductive area

36 non-conductive area

38 electrical field

40 vertical first electrode, column electrode

42 horizontal second electrode, row electrode

44 electrode gap

50 display

52 display cover

54 display light-control layers

56 display substrate

60 display system

70 electrical connections

80 controller

90 laser

92 laser beam

100 provide first substrate step

105 form first conductive layer step

110 form first encapsulating layer step

111 provide dielectric layer step

115 pattern first conductive layer step

120 provide second substrate step

125 form second conductive layer step

130 form second encapsulating layer step

131 provide dielectric layer step

135 pattern second conductive layer step

140 locate first and second substrates step

150 laminate step

160 align heat source step

165 pattern-wise heat first and second conductive layers step

170 locally melt first and second conductive material portion step

175 pattern-wise coalesce conductive material step

160 provide display device on substrate step

180 anneal layers step

200 provide display device step

205 assemble first substrate as cover step

210 connect electrodes step

215 connect controller step

220 provide electrical power and signals step

225 test capacitance step

230 provide conductive touch step

235 scan electrodes and test capacitance step

240 determine capacitance change step

245 determine touch location step

1. Transparent capacitor apparatus, comprising: a first transparentsubstrate including a first patterned conductive layer having a firstconductive material located over the first transparent substrate; adielectric layer located over the first patterned conductive layer; asecond patterned conductive layer including a second conductive materiallocated over the dielectric layer, wherein the second pattern isdifferent from the first pattern; a second transparent substrate locatedover the dielectric layer; and wherein portions of the first conductivematerial of the first patterned conductive layer overlap portions of thesecond conductive material of the second patterned conductive layer andthe overlapping portions of the first and second conductive materialsform matching patterned electrical conductor(s) having spatiallymatching conducting and non-conductive areas, the non-conductive areasof the first and second patterned conductive layers having encapsulatedcoalesced conductive material structures.
 2. The transparent capacitorapparatus of claim 1, further including a first electrical connectionconnected to the first patterned conductive layer and a secondelectrical connection connected to the second patterned conductivelayer, the first and second electrical connections adapted to beingelectrically connected to an electrical power source or electricalsensing circuit.
 3. The transparent capacitor apparatus of claim 1,wherein the first conductive material is a metal or metal alloy or thesecond conductive material is a metal or metal alloy.
 4. The transparentcapacitor apparatus of claim 3, wherein the metal is nickel, tungsten,silver, gold, titanium, or tin or includes nickel, tungsten, silver,gold, titanium, or tin.
 5. The transparent capacitor apparatus of claim1, wherein the first conductive material and the second conductivematerial are the same material.
 6. The transparent capacitor apparatusof claim 1, further including one or more bi-layers located on either orboth sides of the dielectric layer, each bi-layer including a patternedconductive layer and a transparent encapsulation layer, located so thateach patterned conductive layer is separated from each other patternedconductive layer by a transparent encapsulation layer and wherein eachpatterned conductive layer has the same pattern.
 7. The transparentcapacitor apparatus of claim 6, wherein the transparent separation layerincludes a polymer.
 8. The transparent capacitor apparatus of claim 6,wherein the transparent separation layer includes an electricallyconductive material or a dielectric material.
 9. The transparentcapacitor apparatus of claim 6, wherein the patterned conductive layerof one bi-layer is a different material from the patterned conductivelayer of another, different bi-layer.
 10. The transparent capacitorapparatus of claim 6, wherein the patterned conductive layer of onebi-layer is a different material having a different reflectivity fromthe patterned conductive layer of another, different bi-layer.
 11. Thetransparent capacitor apparatus of claim 6, wherein the bi-layers forman optical interference filter.
 12. The transparent capacitor apparatusof claim 1, wherein the first patterned conductive layer forms aplurality of electrically separate first electrodes extending in a firstdirection and the second patterned conductive layer forms a plurality ofelectrically separate second electrodes extending in a second directiondifferent from the first direction, and the first and second electrodesoverlap to form charge storage or charge sensing areas.
 13. Thetransparent capacitor apparatus of claim 12, wherein the first andsecond electrodes, when energized, form a variable electrical fieldacross the overlapping portions of the first and second conductivematerials.
 14. The transparent capacitor apparatus of claim 1, whereinthe first transparent substrate or the second transparent substrate is adisplay device cover or substrate or is affixed to a display devicecover or substrate.
 15. The transparent capacitor apparatus of claim 1,further including a first encapsulation layer located over the firstpatterned conductive layer so that the first patterned conductive layeris between the first encapsulation layer and the first substrate or asecond encapsulation layer located over the second patterned conductivelayer so that the second patterned conductive layer is between thesecond encapsulation layer and the second substrate.
 16. The transparentcapacitor apparatus of claim 15, wherein the first substrate, secondsubstrate, first encapsulation layer, or second encapsulation layer iselectrically conductive.
 17. The transparent capacitor apparatus ofclaim 15, wherein the first substrate, second substrate, firstencapsulation layer, or second encapsulation layer is the dielectriclayer or a portion of the dielectric layer.
 18. The transparentcapacitor apparatus of claim 1, wherein the first pattern differs fromthe second pattern by orientation.
 19. The transparent capacitorapparatus of claim 18, wherein the orientation is a ninety degreerotation.
 20. An interactive display system, comprising: the transparentcapacitor apparatus of claim 1; a display device having a substrate orcover; and wherein the first substrate of the transparent capacitorapparatus is the cover or substrate of the display device or is affixedto the cover or substrate of the display device.
 21. The interactivedisplay system of claim 20, wherein the first patterned conductive layeris orthogonal to the second patterned conductive layer, and overlappingportions of the first and second patterned conductive layers form anaddressable array of capacitors.
 22. The interactive display system ofclaim 20, wherein the transparent capacitor apparatus forms a capacitivetouch screen.